As device sizes continue to increase on devices at 2x nm design rule and beyond and high wafer stress is worsening due to multi-film stacking in the vertical memory process, we observe an increasing ...

Modern advanced packaging processes and shrinking semiconductor device sizes mean that it is vital to consistently eliminate sub-20 nm defects and surface contaminants. To do this effectively, the ...

What if manufacturing companies could pinpoint the exact cause of a defect the moment it occurs, preventing costly production delays and ensuring top-notch quality? Generative artificial intelligence ...

During 7nm gate poly removal process, polysilicon is removed exposing both NFET and PFET fins in preparation for high-k gate oxide. If the polysilicon etch is too aggressive or the source and drain ...