Market was valued at USD 0.07 Billion in 2025 and is projected to reach USD 0.10 Billion by 2035, growing at a CAGR of 4.37% during 2026–2035 driven by rising demand for low-power, high-endurance ...
YOKOHAMA, Japan, Aug. 7, 2023 /PRNewswire/ -- Fujitsu Semiconductor Memory Solution Limited announced the launch of an I2C-interface 512Kbit FeRAM with automotive grade, MB85RC512LY. Evaluation ...
What would life be like if you had access to random access memory that coupled the fast operating characteristics of DRAM with flash memory's ability to retain data while powered off? Pretty darn ...
CEA-Leti research engineers have demonstrated for the first time a scalable hafnia-zirconia-based ferroelectric capacitor platform integrated into the back-end-of-line (BEOL) at the 22 nm FD-SOI ...
TOKYO — Matsushita Electric Industrial Co. Ltd. has added contactless smart card capabilities to its SD memory card using FeRAM technology in the smart card module to achieve a five-fold increase in ...
To migrate these devices from laboratory research to large-scale industrial fabrication is still a challenge given the industry's massive investment in silicon technologies and infrastructure. Silicon ...
SAN FRANCISCO – Dec. 10, 2024 – CEA-Leti research engineers in France have demonstrated for the first time a scalable hafnia-zirconia-based ferroelectric capacitor platform integrated into the ...
Scalable Platform ‘Opens the Door for Faster, More Energy-Efficient, and Cost-Effective Memory Solutions in Embedded Systems, Such as IoT, Mobile Devices, and Edge Computing’ ' SAN FRANCISCO – Dec. 10 ...
CEA-Leti research engineers demonstrated for the first time a scalable hafnia-zirconia-based ferroelectric capacitor platform integrated into back-end-of-line (BEOL) at 22nm FD-SoI technology node.
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