Market was valued at USD 0.07 Billion in 2025 and is projected to reach USD 0.10 Billion by 2035, growing at a CAGR of 4.37% during 2026–2035 driven by rising demand for low-power, high-endurance ...

Shrinking ferroelectric tunnel junctions can significantly boost their performance in memory devices, as reported by ...

An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite being just 30 nm thick including top and bottom electrodes—making it ...

Forbes contributors publish independent expert analyses and insights. Covering Digital Storage Technology & Market. IEEE President in 2024 There has been a fair amount of coverage in the last couple ...