IGBT failures are often caused by gap-types defects in or among the materials bonded to create the module. The defects may be voids, delaminations, disbonds, or may involve the tilting of a layer, ...
DUBLIN--(BUSINESS WIRE)--The "IGBT & Thyristor Market by Packaging Type (IGBT Discrete, IGBT Module), Power Rating (Medium Power IGBT, High Power IGBT), Voltage (Below 400V, 600-650V), Application ...
Previously, a Power Electronics Technology article titled “Inverted Acoustic System Cuts IGBT Failures” (September 2011) examined the use of an acoustic microscope to image heat-blocking defects such ...
The MIXD600PF650TSF is a 600-V, 650-A IGBT module in the SimBus-F outline featuring high level of integration with only one power semiconductor module required for the whole drive. It is designed for ...
SUNNYVALE, Calif.--(BUSINESS WIRE)--Fairchild (NASDAQ: FCS), a leading global supplier of high-performance semiconductor solutions, is today expanding its growing portfolio of automotive-grade ...
The 1200V / 300A Half-Bridge IGBT is rated for 450A continuous DC current (Tj=90°C) based on Trench Gate Field Stop (TG-FS) technology. And it is housed in the CPAK-EDC package with a copper baseplate ...
onsemi has announced the availability of its 1200V SPM31 intelligent power modules (IPMs) featuring the latest generation Field Stop 7 (FS7) Insulated Gate Bipolar Transistor (IGBT) technology. The ...
Semikron has added a new topology for use in three-level inverters to its Semitop IGBT product range. The topology integrates IGBT technology with lower switching and conduction losses to produce ...
Cissoid is broadening its range of standard products with multiple new families of power modules. Designed to address the growing demand for robust, efficient, and flexible solutions in automotive, ...
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