1SP0635 SCALE-2 Plug-and-Play drivers safely and reliably drive 130 x 140 mm and 190 x 140 mm high-voltage and high-power IGBT modules ranging from 1200 V to 3300 V. They are optimised for use in high ...

Microchip Technology Inc. has announced a portfolio of IGBT 7 devices housed in different packages, offering multiple topologies and current and voltage ranges. Featuring increased power capability, ...

Microsemi Corporation announced a line of intelligent half bridge Insulated Gate Bipolar Transistor (IGBT) standard power modules, including five products that simplify system design and are each ...

MALVERN, Pa., Feb. 21, 2024 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced five new half-bridge IGBT power modules in the newly redesigned INT-A-PAK package. Built on ...

New power modules with solderable pin terminals have changed the structure of inverters in applications up to 20kW. The new EconoPACK+ package was designed to fill the gap between 20kW and 100kW ...

Cissoid, the Belgian power semiconductor specialist, is introducing new families of power modules designed for automotive, industrial, and energy markets and covering a wide variety of current and ...

Cissoid is broadening its range of standard products with multiple new families of power modules. Designed to address the growing demand for robust, efficient, and flexible solutions in automotive, ...

NUREMBERG, Germany--(BUSINESS WIRE)--PCIM 2023 – Power Integrations (NASDAQ: POWI), the leader in gate-driver technology for medium- and high-voltage inverter applications, today introduced the ...

The 1200V / 300A Half-Bridge IGBT is rated for 450A continuous DC current (Tj=90°C) based on Trench Gate Field Stop (TG-FS) technology. And it is housed in the CPAK-EDC package with a copper baseplate ...

onsemi has announced the availability of its 1200V SPM31 intelligent power modules (IPMs) featuring the latest generation Field Stop 7 (FS7) Insulated Gate Bipolar Transistor (IGBT) technology. The ...

CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. announced a new version of its 2.0kV LV100 insulated-gate bipolar transistor (IGBT) module specifically designed for photovoltaic (PV) ...

The collaboration addresses one of the most significant challenges in large-scale electrification: reducing energy losses and ...