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Redefining GaN power devices for adoption in EVs and data centers
Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN ...
An advanced gate design could reshape EV and data center power systems.
Downscaling of electronic devices, such as transistors, has reached a plateau, posing challenges for semiconductor fabrication. However, a research team led by materials scientists recently discovered ...
A new technical paper titled “Omni 3D: BEOL-Compatible 3-D Logic With Omnipresent Power, Signal, and Clock” was published by researchers at Stanford University, Intel Corporation and Carnegie Mellon ...
Transistors using exotic materials aimed at next-generation CMOS are to feature strongly at the IEEE International Electron Devices Meeting (IEDM), to be held in Washington in December. Amongst the ...
A gate design cuts leakage, raises threshold voltage, and improves stability in GaN power devices, clearing a barrier to wider use in power systems.
WEST LAFAYETTE, Ind. – Researchers have experimentally demonstrated how to harness a property called negative capacitance for a new type of transistor that could reduce power consumption, validating a ...
Tech Xplore on MSN
Atom-thin ferroelectric transistor can store 3,024 polarization states
Over the past few decades, electronics engineers have been trying to develop new neuromorphic hardware, systems that mirror the organization of neurons in the human brain. These systems could run ...
Compare 3 process flows in terms of robustness to process variation to see which one has the lowest likelihood of processing failures. Sub-5 nm logic nodes will require an extremely high level of ...
Transistors have come a long way. Like everything else electronic, they’ve become both better and cheaper. According to a recent IEEE article, a transistor cost about $8 in today’s money back in the ...
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